SemiconductorLasers相关论文
Whispering-gallery mode(WGM)microlasers are potential light sources for photonic integrated circuits and optical informa......
We demonstrate GaSb-based interband cascade lasers[ICLs]emitting around 3.65 μm,which exhibit a room-temperature contin......
提出并数值验证了一种利用光反馈双模分布式反馈(DM-DFB)半导体激光器产生宽带混沌信号的方法。通过双纵模Lang-Kobayashi方程建立......
High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-indu
The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure meta......
Modulation characteristics and microwave generation for AlGaInAs/InP microring lasers under four-wav
The dynamic characteristics are investigated for a microring laser with an external radius of 12 μm subject to external......
Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-aper......
针对激光频率长期漂移锁定问题,实现了一套以光学频率梳为参考源的数字稳频系统。该系统将被控激光与光学频率梳外差干涉,获取表征......
对大功率InGaAsP/GaAs量子阱(QW)半导体激光器(LD)的直流(DC)特性和小注入下的低频噪声(LFN)特性进行了实验研究。DC检测发现,V-I......
双光反馈和双光注入作为抑制光反馈混沌激光器延时特征峰的两种重要方案, 本质上都是通过马赫-曾德尔干涉仪对延时特征峰进行抑制......
We study modulation properties of two-element phased-array semiconductor lasers that can be described by coupled mode th......
The effect of speckle pattern on laser Doppler velocimeters is studied theoretically and experimentally. We have found t......
We propose a design of single-mode orbital angular momentum (OAM) beam laser with high direct-modulation bandwidth. It i......
基于三只参数相近的半导体激光器及单一光纤信道仿真并实验实现了全双工混沌激光保密通信。当两端发送的数据速率均为1.25 Gb/s时，......
Based on the evaluation principle of the measuring uncertainty of the traditional coordinate measuring machine (CMM), th......
湿法氧化工艺是垂直腔面发射激光器(VCSEL) 制备过程中极为关键的技术,但目前氧化工艺的稳定性和可控性仍有待完善。针对氧化过程......
Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region a......
利用单角度面半导体增益芯片及光纤布拉格光栅,研制了1310 nm波段的窄线宽混合集成外腔半导体激光器(ECDL)。该ECDL集成在一个紧凑......
In this paper, a narrow-band tunable external-cavity semiconductor laser with the Littman set-up is reported. The laser ......
Experimental investigation on the time-delay signature of chaotic output from a 1550 nm VCSEL subjec
The time-delay signature (TDS) of chaos output in a 1550 nm vertical-cavity surface-emitting laser (VCSEL) subject to fi......
We report, for the first time to our knowledge, an on-chip mode-locked laser diode (OCMLLD) that employs multimode inter......
本文用龙格-库塔法求解高斯脉冲调制下半导体激光器速率方程,对结果进行了分析。推出了较高偏置直流和高斯脉冲调制下计算激光脉冲......
Optical generation of tunable and narrow linewidth radio frequency signal based on mutual locking be
An integrated on-chip optical device consisting of two distributed feedback (DFB) lasers and one multimode semiconductor......
Optical mode study of III–V-nanowire-based nanophotonic crystals for an integrated infrared band mic
In this paper, we study an original strategy to generate an infrared waveband microlaser by an integrated III–V-nanowir......
制作了一种以光纤光栅作为外反馈的半导体激光器。光纤光栅用紫外曝光法制作,反射率为50%。器件在50mA注入电流时,出纤功率高于1mW......
半导体激光器远场分布的高斯模型存在着不少缺点。尽管高斯分布适用于描述半导体激光器平行于结方向上的远场分布，但它不适合表征垂......
通过分析实测法布里-珀罗型半导体激光器(FP-LD)和分布反馈式半导体激光器(DFB-LD)光谱数据特征，提出了一种基于局部最大矩阵的自适......
分析腔面反射率对GaN基半导体激光器斜率效率和输出功率的影响,并对出射波长为450 nm的激光器进行实验验证。结果表明,对于非对称......
随着数据中心、5G宽带无线通信的不断发展,短距宽带传输的需求大幅增长,极大地推动了高速光电器件的发展。在短距应用中,虽然直接......
利用光注入半导体激光器的单周期振荡与多周期振荡状态,提出了一种级联光注入半导体激光器产生超宽带微波频率梳的方案。将由连续......
利用外腔反馈的半导体激光器产生的混沌激光作为熵源,理论模拟和实验研究了不同强度和带宽的量子噪声注入对混沌激光熵含量的增强......
将调制频率为1 GHz的正弦波光信号的高阶谐波分量注入直调激光器,信号的光场强度和载流子浓度相互作用形成光电流,光电流经过直调......
An optical ultra-short pulse train with a duration of 2.9 ps was successfully generated from a passively mode-locked las......
Based on the theory of semiconductor laser pattern and the non-paraxial vectorial moment theory of light beam propagatio......
We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot (QD) lasers grow......
We present several laser sources dedicated to advanced microwave photonic applications. A quantum-dash mode-locked laser......
Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature s
Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an ......
电子辐射是空间辐射环境的重要组成部分, 也是地面模拟空间辐射环境的重要手段。为了研究半导体激光器在空间辐射环境下应用的可行......
1960年发明的固态激光器和气体激光器,1962年发明的双极型半导体激光器和1994年发明的单极型量子级联激光器(QCL)是激光领域的三个......
理论分析并制备了1.31 μm正方形-Fabry-Perot(FP)耦合腔半导体激光器,其中正方形腔作为FP腔的一个反射端面,其反射率可以通过改变......
Using lock-in amplifer and proportional, integral, and derivative (PID) electric circuit, the frequency of diode laser i......
Semiconductor lasers, an important subfield of semiconductor photonics, have fundamentally changed many aspects of our l......
Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantu
Passive mode-locking in semiconductor lasers in a Fabry–Perot configuration with a bandgap blueshift applied to the sat......
为研究基于碳化硅(SiC)陶瓷封装的高功率半导体激光器的散热性能, 将其与常用的氮化铝(AlN)陶瓷进行对比, 使用基于结构函数法的热......
外腔延时特征(TDS)和带宽是影响混沌激光应用的两个重要参量。将一个具有相位调制光反馈的半导体激光器输出的激光注入到另一个具......
Chirped coupled ridge waveguide quantum cascade laser arrays with stable single-lobe far-field patte
Powerscalinginabroadareaquantumcascadelaser(QCL)tendstodeterioratebeamqualitywiththeemissionofamultiple-lobefar-fieldpat......
报道一种用作光通讯光源的外腔锁模多量子阱结构半导体激光器，其脉冲宽度２～５ｐｓ，波长调谐范围为１．５２～１．５７μｍ，锁模频率０．５～１．０ＧＨｚ平均输出光功率为１ｍＷ。......
提出一种可用于降低半导体激光器（SL）输出混沌光的自相关性并增加其带宽的方案。该方案将具有单路相位调制光反馈的SL作为主激光器，将......
分析了影响列阵半导体激光器输出功率的因素。利用分束延生长法生长出ＧａＡｌＡｓ／ＧａＡｓ梯度折射率分别限制单量子阱材料（ＧＲＩＮ－ＳＣＨ－ＳＱＷ）。利用该材料制作出的列阵半......
